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| FDS8884 N-Channel PowerTrench(R) MOSFET February 2006 FDS8884 N-Channel PowerTrench(R) MOSFET 30V, 8.5A, 23m General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5A Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A Low gate charge 100% RG Tested RoHS Compliant M ENTATIO LE N MP LE D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed TA = 25C unless otherwise noted Parameter Ratings 30 20 (Note 1a) (Note 2) 8.5 40 32 2.5 20 -55 to 150 Units V V A A mJ W mW/oC o Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 oC/W o C/W Package Marking and Ordering Information Device Marking FDS8884 Device FDS8884 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDS8884 Rev. A 1 www.fairchildsemi.com FDS8884 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25oC VDS = 24V VGS = 0V VGS = 20V TJ = 125oC 30 23 1 250 100 V mV/oC A nA On Characteristics (Note 3) VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, referenced to 25oC VGS = 10V, ID = 8.5A, VGS = 4.5V , ID = 7.5A, VGS = 10V, ID = 8.5A, TJ = 125oC 1.2 1.7 -4.9 19 23 26 23 30 32 m 2.5 V mV/oC Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF Switching Characteristics (Note 3) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = 15V, VGS = 10V ID = 8.5A VDS = 15V, VGS = 5V ID = 8.5A VDD = 15V, ID = 8.5A VGS = 10V, RGS = 33 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 8.5A ISD = 2.1A IF = 8.5A, di/dt = 100A/s 0.9 0.8 1.25 1.0 33 20 V V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. 2 FDS8884 Rev. A www.fairchildsemi.com FDS8884 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 5.0V VGS = 4.5V VGS = 4.0V VGS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) 3.0 2.5 2.0 VGS = 4.5V VGS = 3V VGS = 3.5V VGS = 4V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 30 20 1.5 1.0 VGS = 5V VGS = 10V 10 VGS = 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 4.0 0.5 5 10 15 20 25 30 ID, DRAIN CURRENT(A) 35 40 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain current and Gate Voltage 60 rDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 8.5A VGS = 10V 55 50 45 40 35 30 25 20 15 2 ID = 8.5A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 25oC -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 1 TJ = -55oC TJ = 150oC Figure 4. On-Resistance vs Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VDD = 5V TJ = 25oC 10 VGS = 0V 1 TA = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS8884 Rev. A www.fairchildsemi.com Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) FDS8884 N-Channel PowerTrench(R) MOSFET 10 8 6 4 2 0 VDD = 10V VDD = 15V 700 600 CAPACITANCE (pF) Ciss f = 1MHz VGS = 0V 500 400 300 200 100 VDD = 20V Coss Crss 0 2 4 6 8 10 0.1 Qg, GATE CHARGE(nC) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 20 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 9 8 ID, DRAIN CURRENT (A) VGS = 10V 10 STARTING TJ = 25oC 7 6 5 4 3 2 1 RJA = 50oC/W VGS = 4.5V STARTING TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 20 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) 10us Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 2000 1000 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 100us 100 I = I25 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25 C o 1ms 10ms 100ms 1s DC VGS=10V 150 - T A ----------------------125 0.1 10 SINGLE PULSE 0.01 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 -5 10 10 -4 10 -3 10 10 10 t, PULSE WIDTH (s) -2 -1 0 10 1 10 2 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDS8884 Rev. A www.fairchildsemi.com FDS8884 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM 0.01 SINGLE PULSE t1 t2 1E-3 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve 5 FDS8884 Rev. A www.fairchildsemi.com FDS8884 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production FDS8884 Rev. A 6 www.fairchildsemi.com |
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